A CAPACITIVELY COUPLED SFQ JOSEPHSON MEMORY CELL

被引:8
作者
SUZUKI, H
HASUO, S
机构
[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn
关键词
Manuscript received October I . 1987: revised January 18. 1988. This work is part of the National Research and Development Program on Scientific Computing System; conducted under a program of the Agency of Industrial Science and Technology. Ministry of International Trade and Industry. The authors are with Fujitsu Ltd.. 10-1. Morinosato-Wakamiya; Atsugi; 243-01; Japan. IEEE Log Number;
D O I
10.1109/16.3375
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
9
引用
收藏
页码:1137 / 1143
页数:7
相关论文
共 9 条
[1]   HIGH-DENSITY NDRO SFQ JOSEPHSON INTERFEROMETER MEMORY CELL [J].
BEHA, H .
IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (06) :3426-3428
[2]   MODEL FOR A 15-NS 16K-RAM WITH JOSEPHSON JUNCTIONS [J].
BROOM, RF ;
GUERET, P ;
KOTYCZKA, W ;
MOHR, TO ;
MOSER, A ;
OOSENBRUG, A ;
WOLF, P .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (04) :690-699
[3]   LOOP DECODER FOR JOSEPHSON MEMORY ARRAYS [J].
FARIS, SM .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (04) :699-707
[4]   SINGLE FLUX-QUANTUM MEMORY CELLS [J].
GUERET, P ;
MOHR, TO ;
WOLF, P .
IEEE TRANSACTIONS ON MAGNETICS, 1977, 13 (01) :52-55
[5]   EXPERIMENTAL SINGLE FLUX QUANTUM NDRO JOSEPHSON MEMORY CELL [J].
HENKELS, WH ;
GREINER, JH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (05) :794-796
[6]   THIN FILMS OF NIOBIUM FOR CRYOTRON GROUND PLANES [J].
JOYNSON, RE ;
NEUGEBAUER, CA ;
RAIRDEN, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (04) :171-+
[7]   SINGLE FLUX QUANTUM JOSEPHSON MEMORY CELL USING A NEW THRESHOLD CHARACTERISTIC [J].
KUROSAWA, I ;
YAGI, A ;
NAKAGAWA, H ;
HAYAKAWA, H .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1067-1069
[8]   SELF-ALIGNED CONTACT PROCESS FOR NB/AL-ALOX/NB JOSEPHSON-JUNCTIONS [J].
MOROHASHI, S ;
HASUO, S ;
YAMAOKA, T .
APPLIED PHYSICS LETTERS, 1986, 48 (03) :254-256
[9]  
SUZUKI H, 1983, FUJITSU SCI TECH J, V19, P475