NOISE IN JUNCTION- AND MOS-FETS AT HIGH TEMPERATURES

被引：14

作者：

VANDERZIEL, A

机构：

[1] Electrical Engineering Department, University of Florida, Gainesville

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 11期

关键词：

D O I：

10.1016/0038-1101(69)90043-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At high temperatures a leakage current flows to the gate of a junction-FET and to the substrate of an MOS-FET. It is shown that in a junction-FET there is shot noise of the gate current and a strongly correlated noise component in the drain current. In an MOS-FET the effect of the leakage current is less significant, but there is a shot noise component at the drain. Leakage currents seriously effect the low-noise operation of junction-FET's whereas the effect in MOS-FET's is relatively small. © 1969.

引用

页码：861 / +

页数：1