PHYSICAL-PROPERTIES OF II-VI BINARY AND MULTI-COMPONENT COMPOUND FILMS AND HETEROSTRUCTURES FABRICATED BY CHEMICAL VAPOR-DEPOSITION

被引：42

作者：

RAZYKOV, TM

机构：

[1] Uzbek Acad of Sciences, Russia

来源：

THIN SOLID FILMS | 1988年 / 164卷

关键词：

Semiconductor Device Manufacture--Chemical Vapor Deposition - Semiconductor Devices--Heterojunctions;

D O I：

10.1016/0040-6090(88)90153-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The physico-chemical processes taking place during chemical vapor deposition (CVD) of CdTe, CdSe, ZnxCd1-xS, ZnxCd1-xTe and (ZnSe)x(CdTe)1-x films from binary and elemental AII and BVI sources in a hydrogen flow in a quasi-closed chamber were analyzed. The dependences of the resistivity, transmittance spectrum and band gap on the composition of the films and on the molecular beam intensity ratio during synthesis are discussed. The photovoltaic properties of n-ZnxCd1-xS/p-CdTe, n-ZnxCd1-xS/p-Si, n-ZnxCd1-xS/p-Cu2S and p-ZnxCd1-xTe/n-CdTe heterostructures were studied. The variation in the energy band discontinuities ΔEc and ΔEv at the interfaces of the heterostructures studied with the composition of the films is considered.

引用

页码：301 / 308

页数：8

共 53 条

[1]

AZIMOV SA, 1985, PHYS STATUS SOLIDI A, V89, P223

[2] HIGH-EFFICIENCY ELECTROPLATED HETEROJUNCTION SOLAR-CELL [J].