PREPARATION-DEPENDENT RELAXATION IN N-TYPE A-SI-H

被引：3

作者：

KROTZ, G ^{[1
]}

WIND, J ^{[1
]}

MULLER, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E16,D-8046 GARCHING,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1989年 / 60卷 / 02期

关键词：

D O I：

10.1080/09500838908206437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：67 / 71

页数：5

共 8 条

[1]

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[2] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON [J].

MULLER, G ;

KALBITZER, S ;

MANNSPERGER, H .

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[3]

MULLER G, 1988, APPL PHYS A, V45, P63

[4]

SMITH ZE, 1989, AMORPHOUS SILICON RE, P409

[5] HYDROGEN DIFFUSION IN AMORPHOUS-SILICON [J].

STREET, RA ;

TSAI, CC ;

KAKALIOS, J ;

JACKSON, WB .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (03) :305-320

[6] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[7] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].

STREET, RA ;

KAKALIOS, J ;

TSAI, CC ;

HAYES, TM .

PHYSICAL REVIEW B, 1987, 35 (03) :1316-1333

[8]

Winer K, 1989, AMORPHOUS SILICON RE, P365

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