VARIABLE RANGE HOPPING CONDUCTION IN THE LOWEST TEMPERATURE REGION

被引：22

作者：

KOBAYASHI, S

MONDEN, Y

SASAKI, W

机构：

[1] Department of Physics, Faculty of Science, University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 10期

关键词：

D O I：

10.1016/0038-1098(79)90117-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experiment on doped semiconductor indicates that there exists a temperature region of hopping conduction where the resistivity varies as T-2, deviating from the Mott formula exp [ (T1 T) 1 4]. A new version of the variable range hopping is proposed taking into account the effect of random nature of the system on the correlation of the energy levels of localized states, and is shown to lead to T-2 dependence of the resistivity in the lowest temperature region. © 1979.

引用

页码：661 / 663

页数：3

共 9 条

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