EVAPORATION OF IMPURITIES FROM SEMICONDUCTORS

[1] COPPER AS AN ACCEPTOR ELEMENT IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (03): : 526 - 527

[2] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J]. PHYSICAL REVIEW, 1952, 88 (01): : 139 - 139

[3] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[4] KROMER H, 1953, NATURWISSENSCHAFTEN, V40, P578

[5] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01): : 23 - 34

[6] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[7] REDICKER RH, 1956, 2ND ANN TECHN M EL D

[8] SABY J, 1953, PHYS REV, V90, P660

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[10] TANENBAUM M, 1956, AT&T TECH J, V35, P1

[1] COPPER AS AN ACCEPTOR ELEMENT IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (03): : 526 - 527

[2] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J]. PHYSICAL REVIEW, 1952, 88 (01): : 139 - 139

[3] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[4] KROMER H, 1953, NATURWISSENSCHAFTEN, V40, P578

[5] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01): : 23 - 34

[6] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[7] REDICKER RH, 1956, 2ND ANN TECHN M EL D

[8] SABY J, 1953, PHYS REV, V90, P660

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[10] TANENBAUM M, 1956, AT&T TECH J, V35, P1