CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE

[1] THEORY OF HALL EFFECT IN DISORDERED SYSTEMS - IMPURITY-BAND CONDUCTION [J]. PHYSICAL REVIEW, 1966, 143 (02): : 652 - &

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[3] INTRINSIC CARRIER CONCENTRATION IN SEMICONDUCTING CDXHG1-XTE ALLOYS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (05) : 697 - &

[4] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (24) : 2063 - &

[5] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &

[6] INTERBAND MAGNETOREFLECTION OF HG1-XCDXTE [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (08) : 451 - &

[7] HARMAN TC, 1970, SOLID STATE RESEARCH

[8] LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[9] SCOTT W, 1970, J APPL PHYS, V42, P803

[1] THEORY OF HALL EFFECT IN DISORDERED SYSTEMS - IMPURITY-BAND CONDUCTION [J]. PHYSICAL REVIEW, 1966, 143 (02): : 652 - &

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[3] INTRINSIC CARRIER CONCENTRATION IN SEMICONDUCTING CDXHG1-XTE ALLOYS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (05) : 697 - &

[4] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (24) : 2063 - &

[5] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &

[6] INTERBAND MAGNETOREFLECTION OF HG1-XCDXTE [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (08) : 451 - &

[7] HARMAN TC, 1970, SOLID STATE RESEARCH

[8] LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[9] SCOTT W, 1970, J APPL PHYS, V42, P803