INFLUENCE OF IONIZED IMPURITIES ON THE LINEWIDTH OF INTERSUBBAND TRANSITIONS IN GAAS/GAALAS QUANTUM-WELLS

被引：35

作者：

DUPONT, EB

DELACOURT, D

PAPILLON, D

SCHNELL, JP

PAPUCHON, M

机构：

[1] THOMSON-CSF, Laboratoire Central de Recherches, 91404 Orsay, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期

关键词：

D O I：

10.1063/1.107082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1-2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewidth of the mid-infrared (10-mu-m) transitions. Besides, it is shown that the scattering processes are more influenced by temperature when donors are far from the quantum well (QW).

引用

页码：2121 / 2122

页数：2

共 9 条

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