SPLIT-GATE DUAL-ELECTRON WAVE-GUIDE DEVICE

被引：45

作者：

EUGSTER, CC

DELALAMO, JA

ROOKS, MJ

MELLOCH, MR

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] PURDUE UNIV,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A split-gate technology on an AlGaAs/GaAs heterostructure is used to implement a novel quantum-effect device which allows two electron waveguides to come into very close proximity to each other over a certain length. The field-effect action of a middle gate controls the height and width of the energy barrier between the waveguides. This allows a gradual transition from two isolated waveguides to two closely spaced waveguides and finally to the merging of both waveguides into a single broad waveguide. Two side gates can control the number of occupied subbands in each waveguide. This is confirmed by the observation of sharp 2e2/h conductance steps in each waveguide at 1.8 K as the side-gate voltage is modulated.

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收藏

页码：642 / 644

页数：3

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