THE INFLUENCE OF THE CHEMICAL-COMPOSITION OF SILICON-NITRIDE FILMS ON THEIR THERMAL-OXIDATION PARAMETERS

被引：13

作者：

CHRAMOVA, LV

SMIRNOVA, TP

AYUPOV, BM

BELYI, VI

机构：

来源：

THIN SOLID FILMS | 1981年 / 78卷 / 04期

关键词：

D O I：

10.1016/0040-6090(81)90032-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：303 / 308

页数：6

共 14 条

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CHRAMOVA, LV ;

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GROVE, AS .

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[4] THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON [J].

ENOMOTO, T ;

ANDO, R ;

MORITA, H ;

NAKAYAMA, H .

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[5]

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[6]

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[8] OXIDATION KINETICS OF POWDERED SILICON NITRIDE [J].

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[9]

KIELE AJ, 1975, J AM CERAM SOC, V58, P17

[10]

KOII E, 1976, J ELECTROCHEM SOC, V123, P1117

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