SCHOTTKY BARRIERS AND THEIR PROPERTIES IN SUPERIONIC CRYSTALS

被引：16

作者：

BREDIKHIN, S ^{[1
]}

HATTORI, T ^{[1
]}

ISHIGAME, M ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.50.2444

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phenomena of Schottky barrier creation in RbAg4I5 are studied. Lunlinescence with high spatial resolution is used as a tool for investigation of the process on the blocking-electrode-solid-electrolyte boundary. The profile of the distribution of electronic centers near the contact region is measured. The presence of electrons and ions in the depletion region at the interface between the RbAg4I5 and the graphite electrode is established and interpreted within the framework of the modified Schottky model. It is shown that the small concentration of electrons determines the extent of the depletion region. The kinetics of the creation of Schottky barriers is measured and described by taking into account the presence of self-trapped electrons and mobile silver ions in RbAg4l5. It is shown that the small value of the self-trapped electron diffusion coefficient (D(st) congruent-to 1 X 10(-8) cm2/sec) limits the kinetics of the process of creation of Schottky barriers.

引用

页码：2444 / 2449

页数：6

共 17 条

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