EVIDENCE FOR INDIRECT ANNIHILATION OF FREE EXCITONS IN 2-6 SEMICONDUCTOR LASERS

[1] BRODIN MS, 1967, FIZ TVERD TELA+, V8, P2461

[2] EXCITONS AND ABSORPTION EDGE OF ZNO [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2282 - &

[3] GROSS E, 1966, PHYS CHEM SOLIDS, V27, P1647

[4] BAND EDGE EMISSION PROPERTIES OF CDTE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 109 - 116

[5] KULEWSKY LA, 1966, IEEE J QUANTUM ELECT, VQE 2, P584

[6] KURBATOV LN, 1967, OPT SPECTROSC-USSR, V22, P232

[7] SEMICONDUCTOR LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1276 - +

[8] SEMICONDUCTOR LASERS [J]. APPLIED OPTICS, 1966, 5 (10) : 1514 - +

[9] PARSONS RG, 1961, P ROY SOC LONDON, VA262, P120

[10] REYNOLDS DC, 1967, T METALL SOC AIME, V239, P300

[1] BRODIN MS, 1967, FIZ TVERD TELA+, V8, P2461

[2] EXCITONS AND ABSORPTION EDGE OF ZNO [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2282 - &

[3] GROSS E, 1966, PHYS CHEM SOLIDS, V27, P1647

[4] BAND EDGE EMISSION PROPERTIES OF CDTE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 109 - 116

[5] KULEWSKY LA, 1966, IEEE J QUANTUM ELECT, VQE 2, P584

[6] KURBATOV LN, 1967, OPT SPECTROSC-USSR, V22, P232

[7] SEMICONDUCTOR LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1276 - +

[8] SEMICONDUCTOR LASERS [J]. APPLIED OPTICS, 1966, 5 (10) : 1514 - +

[9] PARSONS RG, 1961, P ROY SOC LONDON, VA262, P120

[10] REYNOLDS DC, 1967, T METALL SOC AIME, V239, P300