CARRIER REMOVAL PROFILES FROM OXYGEN IMPLANTED GAAS

被引：22

作者：

GECIM, S

SEALY, BJ

STEPHENS, KG

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 10期

关键词：

D O I：

10.1049/el:19780208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：306 / 308

页数：3

共 8 条

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BLUM, JM ;

MCGRODDY, JC ;

MCMULLIN, PG ;

SHIH, KK ;

SMITH, AW ;

ZIEGLER, JF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :413-418

[2] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

[3]

FAVENNEC PN, 1975, ION IMPLANTATION SEM, P65

[4] CARRIER COMPENSATION OF N-GAAS BY OXYGEN ION-IMPLANTATION [J].

ITOH, T ;

TSUCHIYA, T ;

TAKEUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) :2277-2278

[5] ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION [J].

KATO, Y ;

SHIMADA, T ;

SHIRAKI, Y ;

KOMATSUB.KF .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1044-1049

[6] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS [J].

SEALY, BJ ;

SURRIDGE, RK .

THIN SOLID FILMS, 1975, 26 (02) :L19-L22

[7] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

[8]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

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