CARRIER LOCALIZATION IN LOW-BANDGAP HG1-XCDXTE CRYSTALS, STUDIED BY PHOTOLUMINESCENCE

被引：21

作者：

FUCHS, F

KOIDL, P

机构：

[1] Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12C期

关键词：

D O I：

10.1088/0268-1242/6/12C/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on Fourier transform photoluminescence studies, carried out on bulk Hg1-xCdxTe. Using a double-modulation technique, luminescence in the 10-mu-m range has been measured. The dependence of the luminescence spectra on temperature and excitation density has been studied. A single line with a FWHM of 130 cm-1 is observed, which exhibits an anomalous increase of the intensity with rising temperature. In addition, a change of the lineshape and a large blue shift of the spectra Of 6k(B) (0.52 meV K-1 occurs. These observations are explained on the basis of alloy disorder. Assuming exponential band tails and considering the effect of carrier localization on the minority carrier lifetime, the experimental results are consistently explained.

引用

页码：C71 / C75

页数：5

共 16 条

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