PLANAR MICROWAVE BIASED RF-SQUIDS IN NIOBIUM TECHNOLOGY

被引：12

作者：

MUCK, M

HEIDEN, C

机构：

[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, Jülich, W-5170

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 06期

关键词：

D O I：

10.1007/BF00324323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A planar version of microwave biased SQUIDs is described. In this type of SQUID, a superconducting half-wavelength microstrip resonator serves as tank circuit, into which the SQUID is integrated. For evaluation of this type of SQUID, samples were prepared from thin Nb films on sapphire substrates, using tunnel junctions as Josephson elements. When operated in hysteretic mode, signal voltages of up to 80-mu-V were achieved, corresponding to a flux noise of 4 X 10(-6) phi-0/square-root Hz and an energy resolution of 2 X 10(-31) J/Hz.

引用

页码：475 / 480

页数：6

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