SIMULATION OF SINGLE-ELECTRON CIRCUITS

被引：8

作者：

ROSNER, W

HOFMANN, F

VOGELSANG, T

RISCH, L

机构：

[1] Siemens AG, Corporate Research and Development

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00055-Y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Monte Carlo simulator has been developed for the investigation of arbitrary single electron circuits. After a brief discussion of the fundamental effect we sketch the procedure used in the program. As an application, two circuits are analyzed under various conditions, especially considering possible high temperature operation.

引用

页码：55 / 58

页数：4