SEMICONDUCTOR DIMETHYLAMINE GAS SENSORS WITH HIGH-SENSITIVITY AND SELECTIVITY

被引：43

作者：

TAKAO, Y

NAKANISHI, M

KAWAGUCHI, T

SHIMIZU, Y

EGASHIRA, M

机构：

[1] Department of Materials Science and Engineering, Faculty of Engineering Nagasaki University, Nagasaki, 852

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 25卷 / 1-3期

关键词：

DIMETHYLAMINE; GAS SENSOR; SEMICONDUCTOR SENSOR; TRIMETHYLAMINE;

D O I：

10.1016/0925-4005(95)85084-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The sensing properties of In2O3 doped with 5 mol% MgO (In2O3-MgO(5 mol%)) loaded with a noble metal such as Au, Pd or Pt to dimethylamine (DMA) and trimethylamine (TMA) have been investigated in the temperature range 200-620 degrees C. Among the sensors tested, the sensor loaded with 3.0 wt.% Pt exhibits the highest DMA sensitivity at 300 degrees C, and under this condition the DMA sensitivity is superior to the TMA sensitivity. The high DMA sensitivity is suggested to arise mainly from the consumption of negatively charged chemisorbed oxygen (O-(ad)) during the formation of ethylenimine (C2H5N) from DEXA.

引用

页码：375 / 379

页数：5

共 8 条

[1] ENHANCEMENT OF TRIMETHYLAMINE SENSITIVITY OF SEMICONDUCTOR GAS SENSORS BY RUTHENIUM [J].