OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. ELECTRICAL EFFECTS IN PN DIODES

被引：105

作者：

VARKER, CJ ^{[1
]}

RAVI, KV ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND PROD DIV,MAT RES LAB,5005 E MCDOWELL RD,PHOENIX,AZ 85008

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：272 / 287

页数：16

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