DETERMINATION OF HOT ELECTRON TEMPERATURE IN N-TYPE INSB

Precise hot electron temperature Te was determined against electric field E for two n -InSb samples, of which exhaustion carrier concentration n0 is 1×1014 and 4×1014 cm-3 respectively, provided that lattice temperature TL was at 4.2°K or below 2°K, and a transverse magnetic field B from 0 to 11.2 kG was applied. Te(E) was obtained by comparing resistivity and Hall coefficient at high E with those at ohmic E but at high TL. The results revealed (1) effects of various parameters (B, n0, TL) on Te(E), (2) a bend of Teat 18°K irrespective of B, n0 and TL, (3) slow rise of Teabove 18°K, resulting in Te∞ E 2/7 if B =0, (4) termination of reasonable Te at 30°K and predominance of electron-electron scattering below 30°K. Inferences are given in terms of the two-band model. © 1969, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.