PREPARATION AND SPECTROSCOPIC CHARACTERIZATION OF GAMMA-AL2O3 THIN-FILMS

被引:59
作者
JIMENEZGONZALEZ, A
SCHMEISSER, D
机构
[1] Institut für Physikalische und Theoretische Chemie, 7400 Tübingen
关键词
D O I
10.1016/0039-6028(91)90709-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure and surface properties of gamma-Al2O3 thin films are studied. We have prepared the films by oxidizing Al foils under controlled conditions and we characterize the gamma-Al2O3 samples by means of XPS, UPS, and TEM and found no charging. Pronounced effects in temperature-dependent changes of the work function are observed which result from changes in band bending and electron affinities by reorganisation and migration of defects. Thereby the ability of these systems for prototype studies in catalysis and analysis of defects is demonstrated,
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页码:59 / 70
页数:12
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