2 TYPES OF FAR-INFRARED PHOTOCONDUCTIVITY IN ANTIMONY-DOPED GERMANIUM

被引：16

作者：

NAGASAKA, K

NARITA, S

机构：

[1] Department of Material Physics, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 05期

关键词：

D O I：

10.1016/0038-1098(69)90209-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By performing measurements of photoconductivity of Ge(Sb) in the energy region less than the ionization of the donors, we show the existence of two mechanisms for the photoconduction, one being the thermal ionization of electrons in the excited levels which are photoexcited from the isolated donors and the other, possibly, the photoionization of clustered donors with reduced and distributed ionization energies. © 1969.

引用

页码：467 / +

页数：1