ELECTRICAL AND OPTICAL-PROPERTIES OF RF GLOW-DISCHARGES OF AMORPHOUS GAXAS1-X FILMS

被引：5

作者：

AGUIR, K ^{[1
]}

HADIDOU, M ^{[1
]}

LAUQUE, P ^{[1
]}

DESPAX, B ^{[1
]}

机构：

[1] UNIV TOULOUSE 3,CNRS,UA 304,GENIE ELECT LAB,F-31400 TOULOUSE,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 113卷 / 2-3期

关键词：

D O I：

10.1016/0022-3093(89)90016-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：231 / 238

页数：8

共 15 条

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[5] NEW PLASMA DEPOSITION PROCESS OF AMORPHOUS GAXAS1-X IN AN RF CAPACITIVELY COUPLED DIODE SYSTEM [J].

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[10] INFLUENCE OF STOICHIOMETRY ON THE PHYSICAL-PROPERTIES OF MICROCRYSTALLINE-AMORPHOUS GAAS FILMS [J].

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