SOME DESIGN ASPECTS OF MOSLSI OPERATIONAL-AMPLIFIERS

被引:4
作者
HOEFFLINGER, B
SCHUMACHER, K
SIBBERT, H
机构
来源
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES | 1979年 / 3卷 / 02期
关键词
Compendex;
D O I
10.1049/ij-ssed.1979.0010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An m. o. s. operational amplifier suitable for large-scale integration using n-channel enhancement-depletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2. 4 mW and it occupies only 0. 2 mm**2. These miniaturized amplifiers require computer aided design, and the capabilities of the nonlinear d. o. m. o. s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.
引用
收藏
页码:33 / 40
页数:8
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