FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP

[1] RAMAN AND INFRARED ACTIVE MODES OF ALUMINIUM PHOSPHIDE [J]. PHYSICS LETTERS A, 1968, A 26 (07) : 331 - +

[2] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[3] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &

[4] DEAN PJ, TO BE PUBLISHED

[5] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389

[6] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[7] HERMAN F, F3361567C1793 CONTR

[8] HROSTOWSKI HJ, 1956, BELL LAB REC, V34, P246

[9] KISCHIO W, 1964, Z ANORG ALLGEM CHEM, V328

[10] EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 388 - 392

[1] RAMAN AND INFRARED ACTIVE MODES OF ALUMINIUM PHOSPHIDE [J]. PHYSICS LETTERS A, 1968, A 26 (07) : 331 - +

[2] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[3] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &

[4] DEAN PJ, TO BE PUBLISHED

[5] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389

[6] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[7] HERMAN F, F3361567C1793 CONTR

[8] HROSTOWSKI HJ, 1956, BELL LAB REC, V34, P246

[9] KISCHIO W, 1964, Z ANORG ALLGEM CHEM, V328

[10] EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 388 - 392