MEASUREMENT OF THE STOPPING POWER OF SILICON FOR ANTIPROTONS BETWEEN 0.2 AND 3 MEV

被引：47

作者：

MEDENWALDT, R

MOLLER, SP

UGGERHOJ, E

WORM, T

HVELPLUND, P

KNUDSEN, H

ELSENER, K

MORENZONI, E

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS,DENMARK

[2] CERN,CH-1211 GENEVA 23,SWITZERLAND

[3] PAUL SCHERRER INST,CH-5232 VILLIGEN,SWITZERLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 58卷 / 01期

关键词：

D O I：

10.1016/0168-583X(91)95670-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Our previous measurement of the stopping power of silicon for antiprotons has been extended down to 200 keV. The antiproton stopping power is found to be more than 30% lower than that for equivelocity protons at 200 keV. The "Z1(3) contribution" to the stopping power (the Barkas effect) is deduced by comparing the stopping power for protons and antiprotons. Comparisons to theoretical estimates are made.

引用

页码：1 / 5

页数：5

共 29 条

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