THE PROPERTIES OF POLYCRYSTALLINE SILICON SOLAR-CELLS WITH CONTROLLED TITANIUM ADDITIONS

[1] BOLDYREV VP, 1977, SOV PHYS SEMICOND+, V11, P709

[2] Davis J. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P490

[3] FISHER H, 1976, 12TH P IEEE PHOT SPE, P86

[4] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 493 - 498

[5] HORNGOBEN E, 1965, PRECIPITATION IRON B, P36

[6] Hunt L. P., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P333

[7] Kuper A. B., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1090

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[9] LINDMAYER T, 1978, 13TH P IEEE PHOT SPE, P1096

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448

[1] BOLDYREV VP, 1977, SOV PHYS SEMICOND+, V11, P709

[2] Davis J. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P490

[3] FISHER H, 1976, 12TH P IEEE PHOT SPE, P86

[4] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 493 - 498

[5] HORNGOBEN E, 1965, PRECIPITATION IRON B, P36

[6] Hunt L. P., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P333

[7] Kuper A. B., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1090

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[9] LINDMAYER T, 1978, 13TH P IEEE PHOT SPE, P1096

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448