THE ENERGY OF ARRAYS OF DISLOCATIONS IN AN ANISOTROPIC HALF-SPACE

被引:46
作者
GOSLING, TJ
WILLIS, JR
机构
[1] School of Mathematical Sciences, University of Bath, Bath
来源
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1994年 / 69卷 / 01期
关键词
D O I
10.1080/01418619408242211
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Exact closed-form solutions are obtained for the energy of arrays of dislocations lying at the interface between a strained epitaxial layer and substrate that are elastically anisotropic and have the same elastic constants. Closed-form solutions are obtained both when all dislocations in an array have the same Burgers vector and when the sign of one or more of the components of the Burgers vector alternates within an array. The method of solution makes the consideration of multiple arrays particularly simple (i.e. sets of more than one array in the interface, each inclined to the others at some non-zero angle, e.g. a pair of orthogonal arrays). Also, an approximate treatment is given of the case in which the elastic constants of the substrate differ from those of the layer by a small perturbation. The method is based on performing a perturbation expansion about the solution for the homogeneous body. A correction term, accurate to first order in the perturbation, is thus obtained to account for the inhomogeneous nature of the body. The given formulae will allow a thorough assessment of the significance of anisotropy in many areas of study, and in particular its significance for the mechanical stability of semiconductor heterostructure devices.
引用
收藏
页码:65 / 90
页数:26
相关论文
共 28 条
  • [1] [Anonymous], 1982, THEORY DISLOCATIONS
  • [2] ANISOTROPIC ELASTIC ENERGY OF A RHOMBUS-SHAPED DISLOCATION LOOP
    BACON, DJ
    BULLOUGH, R
    WILLIS, JR
    [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 31 - &
  • [3] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
    DODSON, BW
    TSAO, JY
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327
  • [4] CORRECTION
    DODSON, BW
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852
  • [5] ANISOTROPIC ELASTICITY WITH APPLICATIONS TO DISLOCATION THEORY
    ESHELBY, JD
    READ, WT
    SHOCKLEY, W
    [J]. ACTA METALLURGICA, 1953, 1 (03): : 251 - 259
  • [6] MISFIT DISLOCATION DISTRIBUTIONS IN CAPPED (BURIED) STRAINED SEMICONDUCTOR LAYERS
    GOSLING, TJ
    BULLOUGH, R
    JAIN, SC
    WILLIS, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8267 - 8278
  • [7] STABLE CONFIGURATIONS IN STRAINED EPITAXIAL LAYERS
    GOSLING, TJ
    JAIN, SC
    WILLIS, JR
    ATKINSON, A
    BULLOUGH, R
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 66 (01): : 119 - 132
  • [8] MISFIT DISLOCATIONS IN A THIN 2-PHASE HETEROEPITAXIAL PLATE
    GUTKIN, MY
    ROMANOV, AE
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (01): : 117 - 126
  • [9] EQUILIBRIUM POSITION OF MISFIT DISLOCATIONS
    GUTKIN, MY
    MILITZER, M
    ROMANOV, AE
    VLADIMIROV, VI
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (02): : 337 - 344
  • [10] A NEW STUDY OF CRITICAL LAYER THICKNESS, STABILITY AND STRAIN RELAXATION IN PSEUDOMORPHIC GEXSI1-X STRAINED EPILAYERS
    JAIN, SC
    GOSLING, TJ
    WILLIS, JR
    TOTTERDELL, DHJ
    BULLOUGH, R
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (05): : 1151 - 1167