SILICON LUMINESCENCE TECHNIQUES FOR THE CHARACTERIZATION OF HOT-CARRIER AND DEGRADATION PHENOMENA IN MOS DEVICES

被引：9

作者：

SELMI, L

机构：

[1] DEIS, 40136 Bologna

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00053-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of hot-carrier induced Light emission represent a valuable mean to investigate hot-carrier and degradation phenomena. This paper reviews research in this held with particular regard to problems still open to investigation, and it discusses results in the characterization of hot carrier and degradation phenomena in MOS transistors.

引用

页码：249 / 256

页数：8

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