CALCULATION OF SURFACE-STATES IN ACCUMULATION LAYER OF TELLURIUM

被引:7
作者
KACZMAREK, E [1 ]
BANGERT, E [1 ]
机构
[1] UNIV WURZBURG,INST PHYS,D-8700 WURZBURG,FED REP GER
关键词
D O I
10.1016/0038-1098(77)90263-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:165 / 168
页数:4
相关论文
共 9 条
  • [1] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR
    BARAFF, GA
    APPELBAUM, JA
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +
  • [2] DOI T, 1970, J PHYS SOC JPN, V28, P36, DOI 10.1143/JPSJ.28.36
  • [3] DOI T, 1972, 11TH P C PHYS SEM WA
  • [4] DEHAAS-VANALPHEN-TYPE OSCILLATIONS IN INTERBAND FARADAY-EFFECT OF TELLURIUM
    LUTZ, M
    BANGERT, E
    MIZRAH, T
    STOLZE, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02): : 523 - 532
  • [5] CONDUCTION BAND EDGE OF TELLURIUM
    REBMANN, G
    RIGAUX, C
    SUFFCZYNSKI, M
    [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (13) : 1021 - +
  • [6] SILBERMANN R, 1975, THESIS WURZBURG
  • [7] SILBERMANN R, 1974, 2ND P INT C SOL SURF, P359
  • [8] Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499
  • [9] VONORTENBERG M, 1975, SOLID STATE COMMUN, V17, P617