GROWTH TEMPERATURE AND PHOSPHORUS VAPOR-PRESSURE DEPENDENCIES OF SI INCORPORATION INTO INP CRYSTALS IN SOLUTION GROWTH-PROCESS

被引：5

作者：

KUBOTA, E ^{[1
]}

KATSUI, A ^{[1
]}

OHMORI, Y ^{[1
]}

SUGII, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 04期

关键词：

D O I：

10.1016/S0022-0248(87)80020-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：737 / 746

页数：10

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