HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES

被引：85

作者：

ITO, K

机构：

[1] Department of Electronics, Faculty of Engineering, Shinshu University, Nagano

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90412-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It was found that the barrier height of the PdZnO contacts decreased when exposed to air containing hydrogen gas. The effect can be attributed to the lowering of the palladium work function due to absorption of hydrogen. When the temperature was increased, the sensitivity of the contacts to hydrogen increased and the response time decreased. The Schottky barrier diodes proposed in this paper can be used as a very sensitive detector of hydrogen gas which operates even at room temperature. © 1979.

引用

页码：345 / 352

页数：8

共 12 条

[1] EXCITONS AND ABSORPTION EDGE OF ZNO [J].