NUCLEATION AND GROWTH OF CRYSTALLITES IN AMORPHOUS ANTIMONY LAYERS ON AS-DEPOSITED ULTRATHIN SUBLAYERS OF METAL - COPPER, SILVER, GOLD, TIN AND LEAD

被引:10
作者
HASHIMOTO, M
UMEZAWA, K
MURAYAMA, R
机构
[1] Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu-shi, Tokyo, 182
关键词
D O I
10.1016/0040-6090(90)90196-K
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical microscopy is used for the in situ observation of the nucleation and growth of crystallites in the amorphous antimony layer prepared on an as-deposited ultrathin sublayer of copper, silver, gold, tin or lead. A whole specimen is deposited on a cover glass in a vacuum of 1 × 10-4 Pa. With the use of sublayers of copper, gold and silver it is possible to measure the growth rate v of antimony crystallites as a function of thickness dSb of the antimony layer. An analysis of the relation of v to dSb on the basis of the model previously presented gives such parameters as the thicknesses ds0 and dv0 of surface regions near the substrate and the vacuum respectively and the growth rates us and uv at surfaces adjacent to the substrate and the vacuum respectively: ds0 = 2.0 nm, dv0 = 5.5nm, us = 11 μm s-1 and uv = 0.21 μm s-1 when dCu is 4.3 × 10-2 nm while ds0 = 0.7 nm, dv0 = 4.4 nm, us = 7.7 μm s-1 and uv = 0.13 μm s-1 when dAu is 4.0 × 10-2 nm. The effective activation energy for the growth of crystallites is determined from an Arrhenius plot of v from 30 to 60°C to be, for example, 1.2 eV at dSb = 3.0 nm and 0.7 eV at dSb = 5.2 nm when dCu is 4.3 × 10-2 nm while it is 1.0 eV at dSb = 2.2 nm and 0.9 eV at dSb = 3.7 nm when dAu is 4.0 × 10-2nm. Sublayers of tin and lead play an extremely progressive role on nucleation of antimony crystallites, resulting in such a high nucleation density that v could not be measured. This originates mainly from the larger area of interface between coupled layers of Sb/Sn or Sb/Pb according to electron microscopy. © 1990.
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页码:95 / 108
页数:14
相关论文
共 15 条
[1]   UBER DIE KRISTALLISATION AUFGEDAMPFTER ANTIMONSCHICHTEN [J].
GOTZBERGER, A .
ZEITSCHRIFT FUR PHYSIK, 1955, 142 (02) :182-200
[2]   PREPARATION OF AMORPHOUS FILMS OF TIN BY QUENCH CONDENSATION WITH IMPURITIES - COMMENT [J].
GRANQVIST, CG .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1975, 21 (02) :127-129
[3]   CRYSTALLIZATION OF AMORPHOUS ANTIMONY LAYERS ON AS-DEPOSITED ULTRATHIN SUBLAYERS OF SILVER [J].
HASHIMOTO, M ;
UMEZAWA, K .
THIN SOLID FILMS, 1988, 167 (1-2) :223-231
[5]   CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILMS ON SILVER FILMS [J].
HASHIMOTO, M ;
KAMBE, K .
THIN SOLID FILMS, 1982, 94 (03) :185-190
[6]   EFFECT OF ELECTRON-IRRADIATION ON THE GROWTH OF THIN ANTIMONY LAYERS DEPOSITED ON COLLODION AND ON CARBON IN A VACUUM OF 10-4PA [J].
HASHIMOTO, M ;
ITOH, M ;
KURAMOCHI, H ;
TAKEI, J .
THIN SOLID FILMS, 1988, 161 :123-130
[7]   CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILMS DEPOSITED ONTO GLASS SUBSTRATES IN ULTRAHIGH-VACUUM [J].
HASHIMOTO, M ;
SUGIBUCHI, H ;
KAMBE, K .
THIN SOLID FILMS, 1982, 98 (03) :197-201
[8]   EFFECT OF THIN METAL SUBLAYERS ON THE STABILITY OF THE AMORPHOUS PHASE OF ANTIMONY LAYERS [J].
HASHIMOTO, M ;
MATUI, M .
APPLIED SURFACE SCIENCE, 1988, 33-4 :826-837
[9]  
HASHIMOTO M, 1980, JPN J APPL PHYS, V29, P21
[10]  
KAISER N, 1984, THIN SOLID FILMS, V115, P309