HIGH-STRESS LOW-TEMPERATURE DISLOCATION KINETICS OF GE

被引：21

作者：

JOHNSON, OW

机构：

来源：

关键词：

D O I：

10.1063/1.1702958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3247 / &

共 13 条

[1] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS
CELLI, V
THOMSON, R
KABLER, M
NINOMIYA, T
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &
[2] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS
CHAUDHURI, AR
PATEL, JR
RUBIN, LG
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &
[3] MECHANISMS OF MICROCRACK GROWTH IN MAGNESIUM OXIDE CRYSTALS
CLARKE, FJP
TATTERSALL, HG
SAMBELL, RAJ
[J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (75): : 393 - &
[4] INDENTATION OF GERMANIUM AT ROOM TEMPERATURE
CRAIG, JV
PUGH, EN
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) : 3417 - &
[5] DRUCKER DC, 1963, FRACTURE SOLIDS, V20
[6] PLASTIC DEFORMATION OF GERMANIUM AND SILICON
GALLAGHER, CJ
[J]. PHYSICAL REVIEW, 1952, 88 (04): : 721 - 722
[7] JOHNSON OW, 1963, J APPL PHYS, V34, P2582
[8] JOHNSON OW, 1963, FRACTURE SOLIDS, V20
[9] DISLOCATION VELOCITIES, DISLOCATION DENSITIES, AND PLASTIC FLOW IN LITHIUM FLUORIDE CRYSTALS
JOHNSTON, WG
GILMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 129 - 144
[10] DISLOCATION MOBILITY IN GERMANIUM
KABLER, MN
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 54 - &