EXCITONIC ENHANCEMENT OF THE FERMI-EDGE SINGULARITY IN THE OPTICAL-SPECTRA OF DOPED SEMICONDUCTORS

被引：64

作者：

MUELLER, JF

机构：

[1] Serin Physics Laboratory, Rutgers University, Piscataway

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.42.11189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature optical-absorption and -emission spectra are calculated for n-type doped semiconductors in which the Fermi level is nearly degenerate with the exciton of a higher conduction band. It is shown that in such a system the Fermi-edge singularity can be strongly enhanced by the hybridization with the excitonic resonance. In fact, due to this enhancement the Fermi-edge singularity, which is usually only observed in absorption, also becomes visible in the emission spectrum, in accordance with recent experimental findings. © 1990 The American Physical Society.

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页码：11189 / 11193

页数：5

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