STUDY OF OXIDE CAPTURE OF AN MOS STRUCTURE BY THERMAL STIMULATION

被引:2
作者
LASSABATERE, L
SEVE, G
MENDOLIA, J
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D O I
10.1016/0040-6090(70)90001-5
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T [工业技术];
学科分类号
08 ;
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页码:381 / +
页数:1
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