CWCO2-LASER ANNEALING OF ARSENIC IMPLANTED SILICON

被引：30

作者：

TAKAI, M

TSIEN, PH

TSOU, SC

ROSCHENTHALER, D

RAMIN, M

RYSSEL, H

RUGE, I

机构：

来源：

APPLIED PHYSICS | 1980年 / 22卷 / 02期

关键词：

D O I：

10.1007/BF00885995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：129 / 136

页数：8

共 25 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[3] LASER ANNEALING OF INDIUM-IMPLANTED PB0.8SN0.2TE FILMS [J].

BAHIR, G ;

BERNSTEIN, T ;

KALISH, R .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :486-488

[4]

CELLER GF, 1979, P LASER SOLID INTERA, P381

[5] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[6] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[7] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[8] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J].

CSEPREGI, L ;

KENNEDY, EF ;

LAU, SS ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :645-648

[9] INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY [J].

DOBBS, BC ;

ANDERSON, WJ ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5052-5056

[10] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

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