GROWTH AND CHARACTERIZATION OF SAPPHIRE RIBBON CRYSTALS

被引:45
作者
WADA, K
HOSHIKAWA, K
机构
关键词
D O I
10.1016/0022-0248(80)90240-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:151 / 159
页数:9
相关论文
共 10 条
[1]  
BARBER DJ, 1965, PHIL MAG, V11, P496
[2]   STUDY OF BASAL DISLOCATIONS IN SAPPHIRE [J].
CASLAVSKY, JJ ;
GAZZARA, CP ;
MIDDLETON, RM .
PHILOSOPHICAL MAGAZINE, 1972, 25 (01) :35-+
[3]   DISLOCATION-FREE GROWTH OF GADOLINIUM GALLIUM GARNET SINGLE-CRYSTALS [J].
COCKAYNE, B ;
ROSLINGT.JM .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (04) :601-605
[4]   EDGE-DEFINED, FILM-FED GROWTH OF MN2SIO4-MNO EUTECTIC COMPOSITES - EFFECT OF DIE-TOP GEOMETRY ON SOLIDIFICATION INTERFACE SHAPE [J].
FINCH, CB ;
HOLDER, JD ;
CLARK, GW ;
YAKEL, HL .
JOURNAL OF CRYSTAL GROWTH, 1977, 37 (03) :245-252
[5]   PLASTIC DEFORMATION OF SINGLE CRYSTALS OF SAPPHIRE - BASAL SLIP AND TWINNING [J].
KRONBERG, ML .
ACTA METALLURGICA, 1957, 5 (09) :507-524
[6]   GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J].
LABELLE, HE ;
MLAVSKY, AI .
MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :571-&
[7]   DISLOCATION REACTIONS AND CAVITATION STUDIES IN MELT-GROWN SAPPHIRE [J].
MAY, CA ;
SHAH, JS .
JOURNAL OF MATERIALS SCIENCE, 1969, 4 (02) :179-&
[8]   CHEMICAL POLISHING OF SAPPHIRE AND MGAL SPINEL [J].
REISMAN, A ;
BERKENBI.M ;
CUOMO, J ;
CHAN, SA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) :1653-&
[9]   DISLOCATIONS IN SAPPHIRE RIBBON CRYSTALS GROWN BY EDGE-DEFINED, FILM-FED GROWTH TECHNIQUE [J].
WADA, K ;
HOSHIKAWA, K .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) :502-504
[10]   INTERFACE GROWTH FEATURE AND VOIDS IN SAPPHIRE RIBBON CRYSTALS [J].
WADA, K ;
HOSHIKAWA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :449-450