DIRECT MEASUREMENT OF CRACK TIP STRESSES

被引：23

作者：

HAERLE, AG ^{[1
]}

CANNON, WR ^{[1
]}

DENDA, M ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT MECH & MAT SCI,PISCATAWAY,NJ 08855

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 11期

关键词：

D O I：

10.1111/j.1151-2916.1991.tb06860.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Raman microprobe spectroscopy was used to measure the crack tip stress distribution in single-crystalline silicon using a wedge-loaded double cantilever beam (dcb) specimen. The wedge was advanced until the crack just propagated. After the crack arrested, the stresses were measured between 3 and 20-mu-m directly ahead of the crack. An average value of -0.43 was obtained for the slope of log stress vs log distance from the crack tip, rather than the theoretical value of -0.5. The value of K(I) was determined from (1) the intercept of this curve and (2) the slope of stress against 1/square-root 2-pi-r. The values were in good agreement. The average experimental value of K(I) was determined to be 0.71 MPa.m1/2, compared to literature values for the K(IC) ranging from silicon of 0.8 to 0.94 MPa.m1/2. The value measured with the Raman is the arrest value of K(I) and is expected to be lower from kinetic energy considerations associated with wedge-loaded dcb specimens.

引用

页码：2897 / 2901

页数：5

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