ULTRAFAST NONLINEARITIES IN SEMICONDUCTOR-LASER AMPLIFIERS

The bound-electronic optical nonlinearities in highly excited semiconductors (i.e., semiconductor lasers) have been calculated using a two-parabolic-band model. The nonlinear absorption spectrum is first obtained using a dressed-state formalism taking into account the contributions from two-photon absorption, electronic Raman, and optical Stark effects. The nonlinear refractive index (n2) is then found by performing a Kramers-Kronig transformation on the nonlinear absorption spectrum. It is also shown that the quadratic Stark splitting of the bands leads to a shift in the quasi-Fermi levels, which introduces additional absorptive and refractive nonlinearities. The sign, magnitude, and the current-density dependence of the calculated n2 agree well with some recently published experimental results for Al-Ga-As and In-Ga-As-P diode lasers. © 1994 The American Physical Society.