PHOTOPLASTICITY IN GE

被引：2

作者：

CAVALLINI, A ^{[1
]}

GONDI, P ^{[1
]}

CASTALDINI, A ^{[1
]}

机构：

[1] UNIV STUDI BOLOGNA,IST FIS A RIGHI,CNR,UNIT GNSM,BOLOGNA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssa.2210320155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K55 / K58

页数：4

共 13 条

[1] INTRODUCTION OF DISLOCATIONS OF DIFFERENT CHARACTER DEPENDING ON DEFORMATION TEMPERATURE IN GE [J].

CAVALLINI, A ;

GONDI, P ;

SCHINTU, F .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02) :523-531

[2] MECHANISM OF MICROPLASTICITY AT INDENTATION IN DIAMOND-STRUCTURE CRYSTALS AT LOW TEMPERATURES [J].

FIGIELSKI, T .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 4 (03) :773-+

[3]

FORTINI A, 1968, LATTICE DEFECTS SEMI, P479

[4]

GONDI P, 1973, JUN P INT SUMM SCH L

[5] ON EXISTENCE OF ELECTROMECHANICAL AND PHOTOMECHANICAL EFFECTS IN SEMICONDUCTORS [J].

HANNEMAN, RE ;

JORGENSEN, PJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4099-+

[6] EFFECT OF LIGHT ON FRACTURE STRENGTH OF GERMANIUM AT ROOM TEMPERATURE [J].

IYER, KR ;

KUCZYNSKI, GC ;

ALLEN, CW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :485-+

[7] DAMAGE PRODUCED IN GE AT ROOM TEMPERATURE BY INDENTATION [J].

JOHNSON, OW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2521-&

[8] LIGHT-INDUCED PLASTICITY IN SEMICONDUCTORS [J].

KUCZYNSKI, GC ;

HOCHMAN, RF .

PHYSICAL REVIEW, 1957, 108 (04) :946-948

[9]

Osip'yan Yu. A., 1973, Soviet Physics - Solid State, V15, P1172

[10]

PATEL IR, 1966, PHYS REV, V143, P601

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