BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON

被引：23

作者：

BARANOWSKI, JM ^{[1
]}

TATARKIEWICZ, J ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.35.7450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7450 / 7453

页数：4

共 27 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] BOND LENGTHS, FORCE-CONSTANTS AND LOCAL IMPURITY DISTORTIONS IN SEMICONDUCTORS [J].

BARANOWSKI, JM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6287-6301

[3] BONDS IN CARBON-COMPOUNDS [J].

BARANOWSKI, JM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (24) :4613-4621

[4] SELF-CONSISTENT TIGHT-BINDING METHOD FOR TOTAL ENERGY CALCULATIONS OF TETRAHEDRAL SEMICONDUCTORS INCLUDING SURFACES AND DEFECTS [J].

BECHSTEDT, F ;

REICHARDT, D ;

ENDERLEIN, R .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1985, 131 (02) :643-657

[5]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[6] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J].

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02) :463-481

[7] THEORY OF THE 2-CENTER BOND [J].

HARRISON, WA .

PHYSICAL REVIEW B, 1983, 27 (06) :3592-3604

[8] TOTAL ENERGIES IN THE TIGHT-BINDING THEORY [J].

HARRISON, WA .

PHYSICAL REVIEW B, 1981, 23 (10) :5230-5245

[9]

Herman F., 1963, ATOMIC STRUCTURE CAL

[10] AN EXTENDED HUCKEL THEORY .I. HYDROCARBONS [J].

HOFFMANN, R .

JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (06) :1397-&

← 1 2 3 →