DRIFT MOBILITY IN HYDROGENATED AMORPHOUS-SILICON FROM PHOTOCONDUCTIVITY DECAY

被引：6

作者：

MODDEL, G ^{[1
]}

VIKTOROVITCH, P ^{[1
]}

机构：

[1] ECOLE CENT LYON,ELECTR AUTOMAT & MESURES ELECT LAB,CNRS,UA 848,F-69131 ECULLY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：205 / 209

页数：5

共 29 条

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[2] ANDERSON DA, 1980, PHILOS MAG B, V44, P187
[3] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI
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[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374
[5] THE RELATIONSHIP BETWEEN TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS
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[J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 41 - 52
[6] TRANSIENT-PHOTOCURRENT STUDIES IN A-SI-H
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[7] COMPARATIVE-STUDY OF TIME-RESOLVED CONDUCTIVITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2236 - 2241
[8] MACKENZIE KD, 1987, MATERIALS RES SOC S, V95, P281
[9] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H
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THOMPSON, MJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60
[10] INFLUENCE OF VARIOUS DISTRIBUTIONS OF LOCALIZED STATES UPON TRANSIT PULSE DISPERSION IN AMORPHOUS-SEMICONDUCTORS
MARSHALL, JM
MICHIEL, H
ADRIAENSSENS, GJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (02): : 211 - 223

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