THEORY OF D- STATES IN GE AND SI

被引：7

作者：

CHANG, YC ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.25.3927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3927 / 3944

页数：18

共 28 条

[1]

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RAMDAS, AK .

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[3] DONOR BINDING-ENERGIES IN MULTIVALLEY SEMICONDUCTORS [J].

ALTARELLI, M ;

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[4]

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[5]

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[6] MODEL HAMILTONIAN OF DONORS IN INDIRECT-GAP MATERIALS [J].

CHANG, YC ;

MCGILL, TC ;

SMITH, DL .

PHYSICAL REVIEW B, 1981, 23 (08) :4169-4182

[7]

CONDON EU, 1967, THEORY ATOMIC SPECTR, pCH6

[8]

Edmonds A.R., 1957, ANGULAR MOMENTUM QUA, DOI [10.1515/9781400884186, DOI 10.1515/9781400884186]

[9] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[10]

GERSHENZON EM, 1971, PISMA ESKP TEOR FIZ, V14, P281

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