DIODE-PUMPED PASSIVELY Q-SWITCHED PICOSECOND MICROCHIP LASERS

被引：406

作者：

ZAYHOWSKI, JJ

DILL, C

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, 02173-9108

来源：

OPTICS LETTERS | 1994年 / 19卷 / 18期

关键词：

D O I：

10.1364/OL.19.001427

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Passively Q-switched 1.064-mu m microchip lasers have been constructed from thin pieces of Nd3+:YAG bonded to thin pieces of Cr4+:YAG. When pumped with the unfocused 1.2-W output of a fiber-coupled diode, these devices produced 11-mu J pulses of 337-ps duration at a pulse repetition rate of 6 kHz in a single-frequency TEM(00) mode. The peak power of the lasers was in excess of 28 kW, with unfocused peak output intensities exceeding 180 MW/cm(2).

引用

页码：1427 / 1429

页数：3

共 6 条

[1]

ANDRAUSKAS DM, 1991, OSA PROC, V10, P393

[2] THEORY OF LASER GIANT PULSING BY A SATURABLE ABSORBER [J].