SELECTIVE ETCHING OF GAAS AND AL0.30GA0.70AS WITH CITRIC-ACID HYDROGEN-PEROXIDE SOLUTIONS

[1] KENEFICK K, 1982, J ELECTROCHEM SOC, V129, P2380, DOI 10.1149/1.2123532

[2] AN IMPROVED TECHNIQUE FOR SELECTIVE ETCHING OF GAAS AND GA1-XALXAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6441 - 6442

[3] EXTREMELY LOW-INTENSITY OPTICAL NONLINEARITY IN ASYMMETRIC COUPLED QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1786 - 1788

[4] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[5] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060

[6] PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 676 - 680

[7] THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1768 - 1773

[1] KENEFICK K, 1982, J ELECTROCHEM SOC, V129, P2380, DOI 10.1149/1.2123532

[2] AN IMPROVED TECHNIQUE FOR SELECTIVE ETCHING OF GAAS AND GA1-XALXAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6441 - 6442

[3] EXTREMELY LOW-INTENSITY OPTICAL NONLINEARITY IN ASYMMETRIC COUPLED QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1786 - 1788

[4] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[5] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060

[6] PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 676 - 680

[7] THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1768 - 1773