ANISOTROPIC TRANSPORT IN A MODULATION-DOPED GAAS QUANTUM-WELL MICROSTRUCTURED BY GROWTH ON A SUBMICRON GRATING

被引：2

作者：

HELM, M ^{[1
]}

COLAS, E ^{[1
]}

HAYES, JR ^{[1
]}

VANDERGAAG, B ^{[1
]}

SCHIAVONE, LM ^{[1
]}

HWANG, DM ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.104297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the transport properties of quantum wire-like GaAs/AlGaAs heterostructures, obtained by organometallic chemical vapor deposition of a modulation-doped quantum well structure on a submicron grating, etched in the substrate prior to growth. Shubnikov-deHaas and mobility measurements show that the electron gas is preserved in the grating areas and that transport parallel to the grating is not severely degraded as compared to an unpatterned control sample. Perpendicular to the grating the mobility strongly decreases at low temperatures, leading to an anisotropy ratio of 1:200. The temperature dependence of the perpendicular mobility indicates strong boundary scattering at the GaAs/AlGaAs interfaces.

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页码：1320 / 1322

页数：3

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