THE INFLUENCE OF STRUCTURAL DEFECTS ON THE ELECTRONIC-PROPERTIES OF AMORPHOUS TA2O5

被引:7
作者
KHANIN, SD
IVANOVSKII, AL
机构
[1] Institute of Solid State Chemistry, Russian Academy of Sciences, Ural Branch, Ekaterinburg
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 174卷 / 02期
关键词
D O I
10.1002/pssb.2221740214
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The non-empirical self-consistent method of discrete variation is employed to calculate the electronic structure of clusters simulating amorphous Ta2O5, which contains anionic vacancies, hydrogen impurities, and substitutional defects (in anionic (N and F) and cationic (Mo and W) sublattices). The influence of these defects on the electronic structure, as well as interatomic bonds, charge distributions, and dielectric properties of amorphous Ta2O5 is discussed.
引用
收藏
页码:449 / 461
页数:13
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