MEAN CURRENT OF MICROWAVE-DRIVEN ULTRASMALL CAPACITANCE DOUBLE-JUNCTIONS WITH EXTERNAL ELECTROMAGNETIC ENVIRONMENT

被引：5

作者：

HADICKE, A ^{[1
]}

KRECH, W ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV JENA,INST FESTKORPERPHYS,MAX WIEN PL 1,D-07743 JENA,GERMANY

来源：

PHYSICA B | 1994年 / 193卷 / 3-4期

关键词：

D O I：

10.1016/0921-4526(94)90037-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of high-frequency microwave irradiation on single-electron tunneling through voltage-biased ultrasmall normal conducting double-junctions embedded in an external electromagnetic environment is investigated. A stationary master equation for the stationary part of the occupation probability of the island electrode has been derived. The time-averaged mean current has been calculated in detail for T = 0 in the presence of a high-resistance environment. It is shown that there is a lifting of the resulting [I]-V characteristics compared with the results known from constant-voltage-driven junctions.

引用

页码：265 / 276

页数：12

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