DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS

被引：102

作者：

ASPNES, DE ^{[1
]}

CHANG, YC ^{[1
]}

STUDNA, AA ^{[1
]}

FLOREZ, LT ^{[1
]}

FARRELL, HH ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.64.192

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Anisotropies of the visible-near-ultraviolet dielectric responses of various (001) GaAs molecular-beam-epitaxy growth surfaces are measured at temperature using a new optical double-modulation technique and a low-strain fused-quartz window. Tight-binding calculations identify structure at 1.8 eV with Ga dimers and at 2.6 and 4.1 eV with As dimers. Transient behavior on interruption of As flux is substantially altered by misorientation, suggesting substantially different terrace properties for vicinally cut surfaces. © 1990 The American Physical Society.

引用

页码：192 / 195

页数：4

共 21 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[2] ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (17) : 1956 - 1959
[3] TEMPORAL AND SPECTRAL DEPENDENCES OF THE ANISOTROPIC DIELECTRIC RESPONSES OF SINGULAR AND VICINAL (001) GAAS-SURFACES DURING INTERRUPTED MOLECULAR-BEAM EPITAXY GROWTH
ASPNES, DE
STUDNA, AA
FLOREZ, LT
CHANG, YC
HARBISON, JP
KELLY, MK
FARRELL, HH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 901 - 906
[4] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001)
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1687 - 1690
[5] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1327 - 1332
[6] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES
ASPNES, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1498 - 1506
[7] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 834 - 837
[8] CHANG YH, IN PRESS
[9] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE
CHIAROTTI, G
DELSIGNO.G
NANNARONE, S
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (16) : 1170 - +
[10] DETERMINATION OF THE COMPLEX DIELECTRIC FUNCTION OF SI(111) 2X1 GAAS(110) AND GAP(110) SURFACES BY POLARIZED SURFACE DIFFERENTIAL REFLECTIVITY
CRICENTI, A
SELCI, S
CICCACCI, F
FELICI, AC
GOLETTI, C
YONG, Z
CHIAROTTI, G
[J]. PHYSICA SCRIPTA, 1988, 38 (02): : 199 - 203

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