A POSITIVE PHOTORESIST ADHESION PROMETER FOR PMMA ON GAAS-MESFETS

被引：11

作者：

LAMARRE, P

MCTAGGART, R

机构：

[1] Raytheon Research Division, Lexington

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 11期

关键词：

D O I：

10.1109/16.62300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The positive photoresist as an adhesion promoter for polymethylmethacrylate, PMMA, resist on GaAs is presented. Using only 60 A of positive photoresist as the interfacial adhesion promoter, the integrity of the PMMA is maintained during either wet chemical etching or plasma etching. While only the results of adhesion with PMMA are reported this technique has recently been applied to other resist systems as well. © 1990 IEEE

引用

页码：2406 / 2407

页数：2